| 摘要 |
PURPOSE:To obtain a method for forming semiconductor layers consecutively under advantageous conditions by feeding a sheet of support member with a silicon oxide film having many through holes along the surface of an almost saturated solution in which a semiconductor material is dissolved in a solvent while both surfaces are brought into contact to cause growth of crystal nuclei generated in through holes. CONSTITUTION:A silicon oxide film is deposited on the surface of a sheet of support member 504; many holes to pierce at least the silicon oxide film are formed in the silicon oxide film at a uniform density, and the sheet of support member 504 is fed along the surface of an almost saturated solution 501 obtained by dissolving a semiconductor material in a solvent and kept at a temperature below the melting point to the semiconductor material while the surface of the solution 501 and that of the sheet of support member 504 are brought into contact to cool down the sheet of support member 504 below the dissolution temperature of the solution 501, so that single nuclei are generated and grown on the inner faces of through holes of the silicon oxide film, whereby a single crystal aggregate is formed on the surface of the sheet of support member 504. |
