| 摘要 |
A method of fabricating a semiconductor integrated circuit carrying a first type semiconductor device wherein at least a part thereof is formed within a substrate and a second type semiconductor device which is provided on an oxide layer formed on the substrate, comprises steps of providing a silicon nitride film on the substrate selectively in correspondence to where the first type semiconductor device is to be formed, oxidizing the substrate using the silicon nitride film as an oxidation resistant mask to form an oxide layer in correspondence to where the substrate is not covered by the silicon nitride film, depositing a silicon layer on the substrate so as to bury thereunder the silicon nitride film and the oxide layer, annealing the silicon layer such that the silicon layer is caused to melt and crystallized subsequently to form a single crystal silicon layer, and patterning the single crystal silicon layer such that the single crystal silicon layer is removed except for a part thereof covering a region of the oxide layer where the second type semiconductor device is to be provided, wherein the step of patterning is performed such that the silicon nitride film is removed simultaneously to the removal of the single crystal silicon layer.
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