| 摘要 |
GERMANIUM-SILICON SEMICONDUCTOR HETEROSTRUCTURES A semiconductor device comprises a short-period superlattice of alternating monolayers of silicon and germanium grown on a 100 oriented SIGe substrate including 60-95% Ge. The silicon layers are M monolayers thick, where M = 2(2m+1) for m = 0, 1 or 2 (preferably 0) and N = 2(2n+1, n=1,2,3,4,5,6 etc. "Inhomogenous" superlattices in which successive Ge layers have thicknesses N1, N2, N3 etc (selected from the above N values) are disclosed. |
