| 摘要 |
PURPOSE:To get a variable capacitance diode device, where high frequency series resistance is reduced, by making a variable capacitance diode element consisting of one PN junction, and connecting the electrode and the lead frame in common with, at least, two wires. CONSTITUTION:An n-conductivity epitaxial layer 2 is made at the surface of a semiconductor substrate 1, and N-conductivity diffusion layer 3 is made in the epitaxial layer 2, and a P-conductivity type diffusion layer 4 is diffused to cover the diffusion layer 3 form the exposed part of the main surface of the diffusion layer 3 so as to form PN junction, thus a variable capacitance diode element is made. 5 is an insulating film such as silicon dioxide, etc. An electrode 6 of aluminum or the like is made at the exposed face of the diffusion layer 4, and the between the electrode 6 and the lead frame, wires 71 and 72 of relatively thin gold wires, or the likes are bonded. The other ends of the wires 71 and 72 are connected to the lead frame. |
