| 摘要 |
PURPOSE:To reduce the size of a memory and enable superhigh density by forming a cyclic potential well in the longitudinal direction of a semiconductor quantum fine line whose diameter is above a specified value, and storing electrons in the well within the range of one or several pieces. CONSTITUTION:Since the GaAs needle-shaped crystal is approximately 6mum, the Al0.1 Ga0.9As layer 3 is approximately 500Angstrom in well width, and the GaAs layer 4 is approximately 100Angstrom in well width, approximately one hundred electrodes can be attached. And electrodes 8 approximately 100Angstrom in diameter are attached to both ends of the needle-shaped crystal so that an electric field can be applied in the longitudinal direction of the quantum well fine line being the semiconductor 100Angstrom or less in diameter. Using the element being made this way as a memory element, the potential well with electrons, to 1, and the well without electrons, to 0, are made to correspond, and those are stored. The electrons are stored in the GaAs layer 4, and if one makes the insulating layer thin in advance, it is possible for the electrons to passes through it by the tunnel effect and reach the electrode 1 and to be sent to an electrode 2 and also sent in form the electrode 2. Furthermore, the electrode 8 can shift the electrons one by one from one quantum well to another quantum well by applying electric fields to both sides of the quantum fine line by a lead wire 5. |
