发明名称 NEGATIVE TYPE PHOTORESIST COMPOSITION
摘要 PURPOSE:To stably form always good films by dissolving specific compds. into alkyl ester pyruvate. CONSTITUTION:Org. high-polymer compds., such as phenol and m-cresol, and radiation sensitive compds., such as azide compd. and diazonium compd., which induce a crosslinking reaction and make irradiated parts insoluble in a developer when irradiated with radiations, such as UV rays, far UV rays, electron rays, and X-rays, are dissolved in the alkyl ester pyruvate. The mol.wt. is preferably in a 2000 to 20000, more preferably 5000 to 15000 range when a novolak resin is used as the org. high-polymer compd. and the mol.wt. is preferably in a 10000 to 500000, more preferably 30000 to 100000 range when an acrylic copolymer is used. The content of the radiation sensitive compd. is preferably 10 to 20wt.% of the weight of the org. high-polymer compd. The good thick films are formed stably if the films are formed in such a manner.
申请公布号 JPH04152346(A) 申请公布日期 1992.05.26
申请号 JP19900276167 申请日期 1990.10.17
申请人 TOKYO OHKA KOGYO CO LTD 发明人 NAKANE HISASHI
分类号 G03F7/004;G03F7/008;G03F7/038;H01L21/027 主分类号 G03F7/004
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