发明名称 Projection exposure apparatus
摘要 An exposure apparatus for exposing on a substrate a pattern formed on a mask, comprises a projection optical system for forming the pattern on a predetermined focusing plane and projecting an image of the pattern on the substrate located to be substantially aligned with the focusing plane, driving means for three-dimensionally moving the mask or at least one of a plurality of optical system, or for inclining the mask or said at least one of the plurality of optical members with respect to a plane substantially perpendicular to an optical axis of the projection optical system and correcting means for driving the driving means to anisotropically change optical characteristics of the projection optical system so that the projected image of the pattern is matched with a pattern already formed on the substrate.
申请公布号 US5117255(A) 申请公布日期 1992.05.26
申请号 US19910760004 申请日期 1991.09.13
申请人 NIKON CORPORATION 发明人 SHIRAISHI, NAOMASA;TANIGUCHI, TETSUO;KAWAI, HIDEMI
分类号 G03F7/20 主分类号 G03F7/20
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