| 摘要 |
<p>PURPOSE:To facilitate particle removal in cleaning by holding the surface of a mask blank wet, and performing movement among processes from a developing process to a cleaning process and processing. CONSTITUTION:Resist, applied to the mask blank in an exposure process 1 and a developing process 2', is exposed by an EB drawing device, etc., and then developed to pattern the resist. Then chromium at a place where the resist is removed by the development is etched in an etching process 5' to form a chromium pattern, the resist which is still left is removed in a resist peeling process 6 and the cleaning process 7, and chromium mist which is generated in the etching and sticks on the surface of the photomask and particles of left regist at the time of resist peeling are removed. In this case, any drying process is not included at all. Consequently, the removal of particles in the cleaning process is facilitated.</p> |
