| 摘要 |
PURPOSE:To reduce leak current at the time of OFF, by forming a protruding part on a gate electrode of a thin film transistor, and covering said protruding part with a channel region. CONSTITUTION:A memory cell is constituted by using a flip-flop wherein a thin film transistor is used as a load element, and a protruding part 23 is formed on a gate electrode 13 of the thin film transistor. The side wall part of the protruding part 23 also is a channel region 16, which is three-dimensionally formed. Hence, in the case that the memory cell area is of almost the same degree, channel length is long as compared with the case that the protruding part 23 is not formed on the gate electrode 13. Thereby leak current when the thin film transistor is in the state of OFF can be reduced. |
