| 摘要 |
A contact structure for connecting a semiconductor device to a wiring electrode comprises a semiconductor layer (11) forming a part of the semiconductor device, a first contact layer (17a) of reduced resistivity for covering a surface of the semiconductor layer, an insulating structure (18, 19) provided on the first contact layer so as to bury the first contact layer underneath, a penetrating hole (20) opened through the insulating structure so as to expose a part of the first contact layer, a second contact layer (17b) of reduced resistivity provided on the part of the first contact layer exposed by the penetrating hole, in which the second contact layer extends from a bottom of the penetrating hole along its side wall, and a conductor layer (22) forming the wiring electrode provided on the second contact layer. |
