| 摘要 |
<p>PURPOSE:To easily decide whether or not the phase shift mask has a defect by adhering resist which is low in transmissivity to inspection light on a substrate which has high transmissivity to the inspection light, exposing and developing the resist by using the phase shift mask, irradiating the substrate with the inspection light and inspecting its transmitted light. CONSTITUTION:The substrate 10 which is made of, for example, quartz with high transmissivity to the inspection light is coated with the resist 11 for a negative type KrF excimer laser and exposed to KrF excimer laser light as exposure light by using the phase shift mask A, and the development is carried out. Then the entire surface of the substrate 10 where a resist pattern is formed is irradiated uniformly with the KrF excimer laser light as the inspection light and a photodetecting means detects the inspection light which is transmitted through the substrate 10. Namely, when the substrate 10 is irradiated with the inspection light, the pattern can be recognized since the transmissivity is low at the resist part 10a and high on the substrate 10. Consequently, the defect of a phase shift film can easily be detected.</p> |
