| 摘要 |
PURPOSE:To increase the quantity of stored memory cell information and to hold the information for a long period of time by constituting the title apparatus in such manner that the capacitative elements of two adjacent memory cells first have one counter electrode and respective two layers of the accumulation electrode of one memory cell and the counter electrode of the other memory cell are formed alternately. CONSTITUTION:On a semiconductor substrate 3, a memory cell composed of an active region 6-1b, a transistor element formed by an active region 6-1a and a capacitative element forming counter electrodes 2b, 2c on and under an accumulation electrode 1-1 is formed and the capacitative element of another memory cell is formed in the manner of adjoining the former capacitative element, which elements first form one counter electrode 2a. The accumulation electrode 1-2 of one memory cell is formed on the counter electrode 2a via one dielectric film 7-2a, the other counter electrode 2b connected with the one counter electrode 2a via the other dielectric film 7-2b is formed on the accumulation electrode 1-2, the accumulation electrode 1-1 of the other memory cell is formed on the counter electrode 2b via the dielectric film 7-1a and further the counter electrode 2c is formed via a dielectric film 7-1b. |
