| 摘要 |
PURPOSE:To form a very thin polycrystalline silicon film having a uniform film thickness by forming beforehand a buffer layer through introducing atoms constituting a semiconductor thin film formed in the surface upper layer of an insulating thin film or atoms having a large chemical or physical affinity for the former atoms and by growing the semiconductor thin film on the buffer layer. CONSTITUTION:In a state where the formation up to a third insulating film 8 is ended, atoms of the same kind as those of a third polycrystalline silicon film to be formed afterwards on the third insulating film 8, e.g. silicon(Si) atoms 21 are introduced onto the surface of the third insulating film 8 by a method such as ion implantation to form a buffer layer 22 being the nucleus of the growth of the third thin film polycrystalline silicon film 9b. After that, the third insulating film 8 grows into the third thin film polycrystalline silicon film 9b having a uniform film thickness on the buffer layer 22 as the nucleus of the growth. When the buffer layer 22 is formed before the growth of the polycrystalline silicon film, the relation between the thickness of the polycrystalline silicon growing film and the growing time becomes a linear one. Therefore, the growing time of the third polycrystalline silicon thin film 9b is controlled very easily so that a desired very thin semiconductor film can be formed uniformly and without irregularity even on the insulating film of a different nature. |
