| 摘要 |
<p>PURPOSE:To remarkably improve the reliability of a semiconductor by forming a diffusion preventing layer for preventing Cu from diffusing in a solder layer in case of brazing electrodes for a semiconductor. CONSTITUTION:After the surface of a Cu or a Cu alloy 3 is covered with a metal 5 having a melting point higher than the Cu, a solder plating 4 is provided. Or, a metal layer 6 is formed also on the film bonding surface of a Cu or Cu alloy foil 3, and the fusion of the Cu in the solder may be prevented previously at the stage of the foil. When the metals 5, 6 has a high melting point higher than Cu, the fusion of the Cu in the solder can be prevented. Accordingly, Ni, Co, Fe, Cr, or Ti is used as the metal, and the alloy includes one or more of elements such as Sn, Zn, In, Cd, Ag or P together with the above metals. The metal layers 5, 6 may be formed in a multilayer structure, and formed electrically or chemically, or by depositing. According to this structure, the Cu of the electrode material is not fused in the solder to prevent it from immersing an Si element, thereby obtaining sufficient heat resistance and reliability.</p> |
