| 摘要 |
PURPOSE:To calculate potential distribution in a semiconductor element of RFP structure in a short time by substituting the formula, of a current in the RFP, in Poisson's equation of the semiconductor when the potential distribution in the semiconductor element of RFP structure is found. CONSTITUTION:A resistor field plate(RFP) 9 made of a semiinsulating polycrystalline silicon high-resistance film is formed on an oxide film 6 on the surface of a wafer. One end of the RFP 9 is connected to an anode electrode 3 and the other end is connected to an electrode 8. When the p-n junction is reverse-biased, uniform potential gradient is formed in the RFP and, when the withstand voltage of the semiconductor element of that structure is rated by calculation, only Poisson's equation is solved on the assumption that the RFP has a very high dielectric constant. The Neumann boundary condition in the RFP shown by formula I is thus satisfied. In the formula, psi is potential. Therefore, potential distribution in the semiconductor element having the RFP structure can be found by that method. |
