| 摘要 |
PURPOSE:To improve a transistor characteristic by forming an etching-resistant metal layer after forming a R first side wall spacer and then by forming a second side wall spacer. CONSTITUTION:On the side wall of a gate electrode 20, a thin first side wall spacer 25 is formed. Then, a metal layer 27 is formed on a part of the surface of a silicon layer 13 which is not covered either by the gate electrode 20 or the first side wall spacer 25 and on the upper surface of the gate electrode 20. Outside the first side wall spacer 25, a second side wall spacer 26 is formed. In a part of the silicon layer 13 which is under the first side wall spacer 25, an optional source region 15 or optional drain region 16 is formed. Here, a part at the silicon layer 13 which is under the second side wall spacer 26 or a contact hole 23 has no dent nor swell due to overetching. Furthermore, since the low-resistance metal layer 27 is formed on the silicon layer 13, a resistance in a source region 17 and drain region 18 can be decreased. |
