| 摘要 |
PURPOSE:To improve the efficiency of the effective area of a Schottky junction and change electric characteristics according to the purpose by forming a plurality of metals of different barrier heights on the irregular surface of a semiconductor and forming at least one irregular surface made of an amorphous semiconductor layer. CONSTITUTION:The barrier height phiB of Schottky barrier formation metal 1 is great, metal 3, such as Ti, of small barrier height phiB has an amorphous semiconductor 4 of great height phiB, and a layer 6 formed in a semiconductor 5 and having a conductivity type opposite to that of the semiconductor 5 is generally called a guard ring. The surface of the semiconductor 5 is irregular and the metal 3 of small barrier height phiB is formed on the approximately flat upper faces of the projections. That structure comprises an equivalent circuit made by connecting a low-barrier Schottky barrier diode to a high-barrier Schottky barrier diode in parallel. |
