METHOD OF FIELD EFFECT TRANSISTOR FABRICATION FOR INTEGRATED CIRCUITS,申请号EP19910305526-传众专利搜索

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发明名称	METHOD OF FIELD EFFECT TRANSISTOR FABRICATION FOR INTEGRATED CIRCUITS
摘要
申请公布号	EP0465045(A3)	申请公布日期	1992.05.20
申请号	EP19910305526	申请日期	1991.06.19
申请人	AMERICAN TELEPHONE AND TELEGRAPH COMPANY	发明人	CHITTIPEDDI, SAILESH;COCHRAN, WILLIAM THOMAS;KELLY, MICHAEL JAMES
分类号	H01L21/265;H01L21/266;H01L21/316;H01L21/336;H01L29/08;H01L29/78;(IPC1-7):H01L21/28;H01L21/318	主分类号	H01L21/265
代理机构		代理人
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