Method of producing low resistance contacts.

摘要

The method for fabrication of low resistance semiconductor contacts includes depositing an insulating layer (14) over the integrated circuit. An adhesion layer (16) is then formed over the insulating layer. A contact opening (18) is formed through the adhesion layer and the insulating layer. A metal silicide layer (20) is then deposited over the integrated circuit including the contact opening. The metal silicide layer and adhesion layer are then etched to form interconnections.