Double metal, bank erasable, flash-EPROM memory.

摘要

Each common source region of the cells of a row of a FLASH-EPROM matrix may be segmented and each segment is individually connected to a secondary source line patterned in a second level metal layer by means of a plurality of contacts between each common source region and patterned portions of a first level metal and through as many interconnection vias between the latter patterned portions of metal 1 and the relative secondary source line patterned in metal 2. The secondary source lines are brought out of the matrix orthogonally to the bit lines and may be connected to a dedicated selection circuitry, thus permitting the erasing by groups or banks of cells of the FLASH-EPROM memory. <IMAGE>