| 摘要 |
<p>This invention concerns a high-frequency oscillator including a MESFET, wherein a GaAs MESFET (1), in which the doping profile of an active layer has a pulse-doped structure, is used as the MESFET. Since the GaAs MESFET (1) is formed to have the pulse-doped structure, the change in transconductance with respect to the change in gate resistance remains constant at gate voltages within a predetermined range. When the gate voltage is set to be a voltage within this predetermined range, a capacitance change with respect to a gate voltage across a gate and a source is reduced. FM noise proportional to the magnitude of this capacitance change is reduced. Accurate information transmission is not interfered unlike in conventional arrangements. <IMAGE></p> |
