发明名称 A solid state imaging element.
摘要 <p>A solid state imaging element includes a plurality of photo detectors arranged in a two-dimensional array on a semiconductor substrate, two charge transfer circuits transferring signal charges in a vertical direction and a horizontal direction, respectively, a plurality of transfer gates controlling charge transfer from the photodetectors to one of the charge transfer circuits, a scanner controlling the switching of the transfer gates, a plurality of bus lines connecting the transfer gates with the scanner, and a bus line breakage checking means. This bus line breakage checking means includes a plurality of transistors connected with each of the bus lines in series, a test pad connected with the bus lines via the transistors and a voltage applying pad controlling the switching of the transistors. Therefore, the breakage of a bus line can be detected by a wafer test without actually operating the element, whereby time and cost required for the wafer test process and the assembly process can be reduced. &lt;IMAGE&gt;</p>
申请公布号 EP0486141(A2) 申请公布日期 1992.05.20
申请号 EP19910308865 申请日期 1991.09.27
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 NAKANISHI, JUNJI
分类号 H01L27/146;H01L27/148;H04N5/33;H04N5/335;H04N5/341;H04N5/369;H04N5/372;H04N5/374;H04N17/00 主分类号 H01L27/146
代理机构 代理人
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