Field-effect transistor.

摘要

There is disclosed a field-effect transistor comprising a channel layer (3), an electron supply layer (5) and a semiconductor layer (4) formed between the channel layer (3) and the electron supply layer (5), the semiconductor layer (4) having a thickness for spatially separating two-dimension electron gas from donor ions in the electron supply layer (5) and forming two-dimension electron gas in the channel layer (3) by a Coulomb's force of the donor ions and having a better high frequency characteristic than that of the electron supply layer (5). <IMAGE>