发明名称 |
Process for preparing a superconducting thin oxide film. |
摘要 |
<p>In a process for preparing a thin film of a Bi-Sr-Ca-Cu-O based oxide superconductor by a laser ablation method in which a target is irradiated with a pulsed laser beam to grow a thin film on a substrate positioned to face the target, the improvement wherein the pulse rate of the pulsed laser beam is adjusted to 0.01 - 10 Hz and the application of the laser beam is interrupted at each time a superconducting thin oxide film is grown to a thickness equivalent to one half the unit cell or one unit cell of a Bi-Sr-Ca-Cu-O based oxide superconductor, whereby a thin film of the oxide superconductor is grown at an average growth rate of no more than 0.5 ANGSTROM /sec. <IMAGE></p> |
申请公布号 |
EP0486054(A2) |
申请公布日期 |
1992.05.20 |
申请号 |
EP19910119543 |
申请日期 |
1991.11.15 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
NAGAISHI, TATSUOKI;HATTORI, HISAO;ITOZAKI, HIDEO |
分类号 |
C01G29/00;C01G1/00;C23C14/28;C30B29/22;H01B12/06;H01B13/00;H01L39/24 |
主分类号 |
C01G29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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