发明名称 Process for preparing a superconducting thin oxide film.
摘要 <p>In a process for preparing a thin film of a Bi-Sr-Ca-Cu-O based oxide superconductor by a laser ablation method in which a target is irradiated with a pulsed laser beam to grow a thin film on a substrate positioned to face the target, the improvement wherein the pulse rate of the pulsed laser beam is adjusted to 0.01 - 10 Hz and the application of the laser beam is interrupted at each time a superconducting thin oxide film is grown to a thickness equivalent to one half the unit cell or one unit cell of a Bi-Sr-Ca-Cu-O based oxide superconductor, whereby a thin film of the oxide superconductor is grown at an average growth rate of no more than 0.5 ANGSTROM /sec. <IMAGE></p>
申请公布号 EP0486054(A2) 申请公布日期 1992.05.20
申请号 EP19910119543 申请日期 1991.11.15
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 NAGAISHI, TATSUOKI;HATTORI, HISAO;ITOZAKI, HIDEO
分类号 C01G29/00;C01G1/00;C23C14/28;C30B29/22;H01B12/06;H01B13/00;H01L39/24 主分类号 C01G29/00
代理机构 代理人
主权项
地址