发明名称 SILICON CARBIDE-BASED COMPOSITE MATERIAL
摘要 PURPOSE:To obtain a silicon carbide-based composite material capable of improving mechanical strength by forming a silicon carbide film composed of radial polycrystals containing columnar crystals on the surface of a silicon carbide- based substrate. CONSTITUTION:A silicon carbide-based composite material is obtained by forming a silicon carbide film composed of radial polycrystals containing columnar crystals on the surface of a silicon carbide-based substrate. In the aforementioned composite material, cracks produced in the thickness direction along grain boundaries of the columnar crystals of the silicon carbide film are prevented from progressing by the radial polycrystals. The surface thereof is smoothed by forming the surface layer from only the columnar crystals. Substrates in which silicon carbide impregnated with metallic silicon, a self- sintered silicon carbide material, a composite material of the silicon carbide and titanium boride, etc., are cited as the silicon carbide-based substrate.
申请公布号 JPH04144963(A) 申请公布日期 1992.05.19
申请号 JP19900264808 申请日期 1990.10.02
申请人 TOSHIBA CERAMICS CO LTD 发明人 HAYASHI TATEO;MIYAZAKI AKIRA;SASA KAZUHARU;SENSAI KOUJI
分类号 C04B35/565;C04B35/56;C04B41/87;C23C16/32 主分类号 C04B35/565
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