| 摘要 |
PCT No. PCT/JP89/00303 Sec. 371 Date Nov. 21, 1989 Sec. 102(e) Date Nov. 21, 1989 PCT Filed Mar. 22, 1989.In a semiconductor laser apparatus of the invention, a semiconductor layer as a substrate on which various semiconductor layers are laminated has a groove or projection having a trapezoidal cross section which extends in the direction of a resonator, and at least one of the semiconductor layers locating on the upstream side of the active layer on a path of a current flowing when a forward bias voltage is applied to electrodes contains p or n type impurity.
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