发明名称 Interlevel dielectric process
摘要 A process for the fabrication of integrated circuits, wherein the interlevel dielectric material is partially etched back prior to reflow. This provides a pre-reflow profile which prevents filament problems in subsequently-patterned conductor levels, and which also avoids cracking of the interlevel dielectric during reflow.
申请公布号 US5114530(A) 申请公布日期 1992.05.19
申请号 US19900552369 申请日期 1990.07.16
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 RAO, KALIPATNAM V.;MITCHELL, ALLAN T.;PATERSON, JAMES L.
分类号 H01L21/768 主分类号 H01L21/768
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