| 摘要 |
PURPOSE:To get a semiconductor storage device where a stacked transistor can be used without incurring process margin by using a high melting point metal as an inner wiring layer, which connects the source/drain of the stacked transistor with the n-type source/drain of a substrate transistor. CONSTITUTION:Inner wiring 11 is provided between the source/drain 8 of the p-channel transistor of a stacked transistor and the source/drain 3 of an n-type substrate transistor, and the material is metal. Accordingly, a semiconductor device can be gotten, which never causes pn junction between these, and besides which never deteriorates contact performance by heat treatment atmosphere, which is great in process margin and highly efficient and high in density. Moreover, the metallic wiring layer is used intact as the gate electrode 11 of a stacked transistor. |
