HOLE MAKING METHOD FOR MULTILAYER WIRING

摘要

The method for forming a via hole connecting between first and second metallic films comprises the steps of forming an oxide film (2) and a first metallic film (3) on a silicon substrate (1); forming a via stud (6') of photoresist film thereon; forming an insulating film (4) on the films (2,3) except the via stud portion; removing the via stud (6') to form a via hole (6); and forming a second metallic film (7) on the films (3,4). The method thereby connects the first metallic film to the second metallic film through the via hole. The method does not include etching the insulating film and removing a photoresist film to reduce the number of process.