| 摘要 |
PURPOSE:To improve S/N and to enable execution of detection of high precision by a method wherein the direction of illumination on a surface to be inspected is made different from each direction in the directional properties of two directions of a pattern on the surface which intersect each other perpendicularly. CONSTITUTION:In order for a resist applied on a wafer 3 not to be exposed to light, a light flux from a light source 11 supplying a light of a different wavelength from an exposure light is focused on a stop 13 and a light source image is formed. A light flux from the light source image is turned into a parallel light flux through a first relay lens 15 and focused at a focal position through a second relay lens 17. Then, a parallel light flux from an objective lens 18 for illumination having the focus at the focal position of the lens 17 illuminates obliquely an area to be inspected being also an area of exposure on the wafer, at an angle theta of incidence. Patterns formed on areas (WP1 to WP2) to be inspected have directional properties in the directions X and Y intersecting each other perpendicularly, and a construction is so made that the direction of illumination of the parallel light flux from the objective lens 18 for illumination is inclined by an angle gamma in respect to the axis X when the illuminated area 3a is viewed from just above it. By this method, execution of detection of high precision is enabled. |
