| 摘要 |
PURPOSE:To securely prevent inter-layer short-circuit by a method wherein, after a first metal mask layer is formed on an insulating layer, this via corresponding hole is closed wit a resist. a second metal mask layer is sputtered to peal the resist with resist pealing liquid. CONSTITUTION:A resist 5 is covered with a second metal mask layer 6 by means of the sputtering onto a first metal mask layer 3, and the defect 10 on the first metal mask layer 3 is filled with the second metal mask layer 6 for repair. After that, when the substrate is dipped in the pealing liquid for the resist 5, the resist pealing liquid permeates from the side wall section of the first metal mask layer 6 and the resist 5 to peal the resist, and the second metal mask layer formed on the surface of the resist 5 is pealed to be removed. In this state, although a defect 10 appears also on the second metal mask layer 6, it is less provable that the defect is positioned on the same place as that of the first metal mask layer 3 and the first metal mask layer 3 functions as a normal mask as a whole since the first metal mask layer 3 is normal. |
