Photosensitive sensor with photodiodes, especially with small-size photodiodes, and method of fabricating such a sensor

摘要

The invention relates to photosensitive sensors including a plurality of photodiodes (D1 to D6) formed on a semiconductor substrate (2), and separated from one another by insulating barriers (B1 to B7) formed by implantation in the semiconductor substrate. The object of the invention is in particular to enhance the uniformity in response of the photodiodes, particularly in the case of small-size pixels. In the sensor of the invention, the substrate (2) bearing the photodiodes is covered with a surface layer (5). In accordance with the invention, the thickness (E1, E2) of the surface layer (5) varies in a pattern which is repeated with a pitch equal to or less than the pitch (L1) of the photodiodes (D1 to D6). <IMAGE>