METHOD FOR FORMING PATTERN

摘要

The method uses a silylation area (4) formed on a photoresist layer (2) on a substrate (1) to form the pillar-shaped photoresist layer (5) under neath the silylation area by using a dry development to form lift-off profiles. The method includes depositing a metallic layer on the substrate and the silylation area by using a sputter to form a metallic pattern (6) on the substrate and a metallic layer (6a) on the silylation area. The method uses the mixing gases of O2 and He upon dry developing to form a fine pattern without defects and obtain the fast dry development rate.