发明名称 MANUFACTURE OF PHOTOELECTRONIC INTEGRATED ELEMENT
摘要 <p>PURPOSE:To eliminate the flawing and staining of an optical waveguide layer on the surface of the photoelectronic integrated element due to the sticking of cutting powder on the surface of the photoelectronic integrated element by cutting a semiconductor wafer into chips by photoelectronic integrated element areas after a protection film is formed on the semiconductor wafer. CONSTITUTION:A photoresist film 3 is formed by coating on the semiconductor wafer 1 where photoelectronic integrated elements are formed and an exposing, a developing, and a baking process are carried out so that the photoresist film is removed on scribing lines 4 while left on the photoelectronic integrated element areas 2. Then the semiconductor wafer 1 is scribed or diced along the scribing lines 4 and cut into the chips by the individual photoelectronic integrated element areas 2. At this time, the cutting chip 5 at the time of the cutting sticks on the photoresist films of the chips, but the photoresist films 3 serve as protection films, so the cutting chip 5 does not contact the photoelectronic integrated element areas 2 directly. Then the photoresist films 3 are peeled off in peeling liquid together with the cutting chip 5.</p>
申请公布号 JPH04142503(A) 申请公布日期 1992.05.15
申请号 JP19900266004 申请日期 1990.10.03
申请人 RICOH CO LTD 发明人 AOKI MASAKANE;HIROE AKIHIKO;FUJITA SHUNSUKE
分类号 G02B6/13;G02B6/12;H01L21/301;H01L21/78;H01S5/00 主分类号 G02B6/13
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