| 摘要 |
PURPOSE:To detect the place of the titled transistor whereat it is coated incompletely with a protection material, without leaving any damage on an article of good quality, by impressing a backward voltage so that a backward current of 1-5mA flows between a collector and a base in the state of high temperature near 100 deg.C. CONSTITUTION:A backward current is increased at a temperature near 100 deg.C by raising a backward voltage, and thereby the concentration of an electric field is generated in the part of a silicon type transistor whereat it is coated incompletely with a protection film. Then, the backward current is further increased to break down the collector-base junction of said part finally by sparks. At this time, the backward current is set to be of 1-5mA so that no damage of high temperature and high voltage is left on an element of good quality. Accordingly, this method can be applied in any process wherein the element is in the state of a wafer or a chip, or in the state just after bonding, or the like. |
