| 摘要 |
PURPOSE:To stably control the line width with high precision by a method wherein a photoresist after the image exposure is heat-treated and then developed by the development termination detection method specifying the time from the heat treatment to the development. CONSTITUTION:A silicon wafer coated with photoresist is exposed and heat- treated to be developed by the development termination detection method after the lapse of specific time from the heat treatment. At this time, it is preferable that this heat treatment is to be operated at 80-140 deg.C for 30-120sec. On the other hand, the shift of the photoresist pattern size due to the dispersion in the time from the exposure to the heat treatment can be cancelled by the heat treatment. Though these procedures, the photoresist pattern size can be controlled with high precision by the development using the development termination detection method regardless of the fluctuation in the exposure by specifying the time from the heat treatment to the development as short as possible. |
