| 摘要 |
PURPOSE:To obtain a resist having high sensitivity and resolution and sensitive to high energy beams by using a specified terpolymer. CONSTITUTION:A terpolymer obtd. by polymerizing 2,2,3,4,4,4-hexafluorobutyl methacrylate, lower fluoroalkyl methacrylate and t-butyl methacrylate is dissolved in a solvent such as aliphatic ketone or aliphatic ester to prepare a resist soln. This soln. is applied to a substrate and prebaked. By this prebaking, part of the methacrylic acid units of the polymer are converted into acid anhydride units and the solvent is evaporated to form a resist film. This resist film is irradiated with high energy beams and developed with isopropanol to form a resist pattern. |
