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发明名称
METHOD OF ANNEALING A COMPOUND SEMICONDUCTOR SUBSTRATE
摘要
申请公布号
EP0216285(B1)
申请公布日期
1992.05.13
申请号
EP19860112701
申请日期
1986.09.15
申请人
SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人
SHIKATA, SHINICHI C/O OSAKA WORKS
分类号
H01L21/314;H01L21/316;H01L21/318;H01L21/324
主分类号
H01L21/314
代理机构
代理人
主权项
地址
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