发明名称 |
Deposition apparatus for growing a material with reduced hazard. |
摘要 |
<p>An apparatus for growing a material comprises a reaction vessel (1) of a metal extending generally in a vertical direction, the reaction vessel forming a reaction chamber (1a) therein, a cooling system (8) provided on said reaction vessel to maintain the reaction vessel at a temperature that the metal forming the reaction vessel does not cause contamination, an inlet (4) provided on the reaction vessel for introducing a reactant gas, an outlet (5) provided on the reaction vessel for exhausting a product gas that is formed in the reaction chamber, a support mechanism (3) at the bottom part of the reaction chamber to seal the reaction chamber, wherein the support mechanism has a rod member (3) extending vertically in said reaction chamber to hold thereon a susceptor (2) that is adapted to hold a wafer (10) on which the material is to be grown. Further there is provided a sleeve member (9) of a stable material particularly at a temperature that is used for growing the material, such that the sleeve member is provided in the reaction chamber along the inner surface. <IMAGE></p> |
申请公布号 |
EP0485301(A1) |
申请公布日期 |
1992.05.13 |
申请号 |
EP19910403018 |
申请日期 |
1991.11.08 |
申请人 |
FUJITSU LIMITED |
发明人 |
ITO, HIROMI;SHIINA, KAZUSHIGE;OHORI, TATSUYA;TANAKA, HITOSHI;TOMESAKAI, NOBUAKI |
分类号 |
C30B25/08;C23C16/54;H01L21/205 |
主分类号 |
C30B25/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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