| 摘要 |
<p>A thin film transistor having an active layer (24) formed between source and drain electrodes (14,15), a gate insulating film (25) formed in contact with the active layer (24) and a gate electrode (18) formed in contact with the gate insulating film (25), said active layer (24) being a multilayer structure of well layers made of hydrogenated amorphous silicon and barrier layers made of hydrogenated amorphous silicon carbide. The gate insulating film (25) can further be made of an amorphous silicon carbide layer having a carbon content greater than the carbon content of the active layer (24).</p> |
