发明名称 |
Laser diode device having a protective layer on its light-emitting end face. |
摘要 |
A laser diode in which a laser diode chip (111) having a light-emitting end face (33) is resin-encapsulated by means of an encapsulating resin layer (10) constituted by an epoxy-based resin or the like. An end-face-breakage preventing layer (10) formed of a silicon-based resin having a high coefficient of light absorption in the wavelength band of a laser beam and a high bond energy is formed on the light-emitting end face (33). The end-face-breakage preventing layer (10) has a thickness of approximately 20 to 30 mu m. <IMAGE> |
申请公布号 |
EP0484887(A2) |
申请公布日期 |
1992.05.13 |
申请号 |
EP19910118848 |
申请日期 |
1991.11.05 |
申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
AMANO, AKIRA;SHINDO, YOICHI;SUGANUMA, NOBUTAKA;NAKATA, KATSUE |
分类号 |
G11B7/09;G11B7/12;G11B7/125;G11B7/22;H01L33/44;H01S5/022;H01S5/028 |
主分类号 |
G11B7/09 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|