| 摘要 |
PURPOSE:To increase the capacitance of a stacked capacitor, by increasing the surface area of a lower electrode by virtue of a second conductor film formed on an insulating film and on the side wall of an eliminated part of a first conductor film. CONSTITUTION:After a field oxide film 2 is formed on the surface of a semiconductor substrate 1, a gate oxide film 3 is formed. Word lines WL1, WL2 are formed. An interlayer insulating film 6 is formed on the whole surface. A polycrystalline Si film 7 is formed on the film 6 After an SiO2 film 8 is formed on the film 7, a resist pattern 9 wherein a part corresponding with a contact hole C is opened is formed. By using said pattern 9 as a mask, the film 8 and the film 7 are etched in order. Thus an aperture 10 is formed, and the film 6 is exposed in the aperture 10. After the pattern 9 is eliminated, a polycrystalline Si film 11 is formed on the whole surface. A polycrystalline Si film 12 is formed on the whole surface. By using a resist pattern 13 as a mask, the films 7, 12 are etched. Thereby a lower electrode 14 constituted of the films 7, 11, 12 is formed. |
