| 发明名称 |
PRESSURE-CONTACT TYPE SEMICONDUCTOR DEVICE |
| 摘要 |
<p>A soft metal plate (10) having substantially the equal hardness as emitter electrodes (6-1 to 6-4) formed of soft metal is disposed between the emitter electrodes (6-1 to 6-4) and a heat buffer metal plate (11) formed of hard metal, and pressure (P1) applied to the emitter electrodes (6-1 to 6-4) is shared by the soft metal plate (10), so as to reduce the thermal fatigue of the emitter electrodes (6-1 to 6-4).</p> |
| 申请公布号 |
EP0285074(B1) |
申请公布日期 |
1992.05.13 |
| 申请号 |
EP19880105000 |
申请日期 |
1988.03.28 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MATSUDA, HIDEO C/O PATENT DIVISION;USUI, YASUNORI C/O PATENT DIVISION;KOJIMA, SHINJIRO C/O PATENT DIVISION;ANDO, MASARU C/O PATENT DIVISION |
| 分类号 |
H01L21/52;H01L23/051;H01L23/48 |
主分类号 |
H01L21/52 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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