| 摘要 |
PURPOSE:To manufacture an excellent X-ray mask which can cope with a finely constituted integrated circuit by coating one surface of a mask for X-ray exposure mask with a negative photosensitive film and developing the photosensitive film after irradiating the film with X-rays from the surface of the mask on the opposite side of the film. CONSTITUTION:An X-ray mask substrate material 3 which is an X-ray transmissive material is deposited on an Si substrate 2 by a prescribed thickness by vapor deposition, etc. After a pattern 4 is formed on the mask substrate 3 by plating, etching, etc., the substrate 2 on the rear of the substrate 3 is removed by back etching so that a desired field angle can be obtained. After a negative photosensitive film 5 is formed on one surface of the substrate 3 by applying a negative resist, the film 5 is irradiated with X-rays 6 from the surface of the substrate 3 on the opposite side of the film 5, with the irradiation quantity being controlled to a suitable level. When the film 5 is developed, the film 5 does not remain where the substrate 3 is thick and remains as a thick film where the substrate 3 is thin. As a result, the intensity of the X-rays transmitted through this mask is made uniform since the total thickness of the substrate 3 and film 5 becomes uniform. |
