<p>A method is provided for depositing aluminum thin film layers to form improved quality contacts in a semiconductor integrated circuit device. All or some of the deposition process occurs at relatively low deposition rates at a temperature which allows improved surface migration of the deposited aluminum atoms. Aluminum deposited under these conditions tends to fill contact vias without the formation of voids. The low temperature deposition step can be initiated by depositing aluminum while a wafer containing the integrated circuit device is being heated from cooler temperatures within the deposition chamber. <IMAGE></p>
申请公布号
EP0485130(A2)
申请公布日期
1992.05.13
申请号
EP19910310146
申请日期
1991.11.01
申请人
SGS-THOMSON MICROELECTRONICS, INC. (A DELAWARE CORP.)