| 摘要 |
PURPOSE:To form very fine grooves etched in a layer by using the shrinkage of positive resist film exposed to an aqueous basic solution. CONSTITUTION:A first positive photoresist 3 is applied to a layer 2 to be etched. After patterned, the photoresist is hardened by a plasma treatment. A second photoresist 4 is applied the whole surface and patterned, and it is then etched until the first photoresist 3 is exposed. The second photoresist is shrunk in an aqueous basic solution to make gaps between the first and second photoresists. The layer 2, exposed through the gaps, undergoes anisotropic etching to provide grooves 6. Very fine patterns less than 0.4mum can be easily formed in this manner. |
