| 摘要 |
PURPOSE:To form a single crystal semiconductor layer on an insulating substrate by epitaxially growing a single crystal semiconductor layer laterally on each insulating layer, with the single crystal 'semiconductor substrate in two adjacent apertures as a seed crystal, and etching back the single crystal semiconductor layer. CONSTITUTION:An SiO2 film 2 is formed on a single crystal silicon substrate 1, and then an SiN film 3 is formed, and a plurality of apertures 2a are formed. The SiN film 3 is formed on the SiO2 film 2 on the vertical bisector, which connects the two adjacent apertures 2a. Next, with the single crystal silicon substrate 1 in the aperture 2a as a seed crystal, a single crystal silicon film 4 is epitaxially grown laterally on the SiO2 film 2 and the SiN 3 by vapor growth method. And the single crystal silicon film 4 is etched back vertically to the surface of the substrate until the SiN 3 film is exposed. Next, the single crystal silicon film 4 at the part of the aperture 2a is oxidized selectively by thermal oxidation method to form an SiO2 film 6.
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