发明名称 Probing method
摘要 The electric characteristic of each of semiconductor chips formed on a semiconductor wafer substrate is measured while keeping probes contacted with electrode pads of the semiconductor chip. The wafer is mounted on a mount movable in directions X, Y, Z and theta . The array direction of the semiconductor chips on the wafer is positioned in the directions X and Y, in which the mount is moved, at an alignment position and the electrode pads of each of the chips are positioned relative to their corresponding probes at a measuring position. Information needed to carry out the positioning at the alignment position is stored as a first data and information needed to carry out the positioning at the measuring position is stored as a second data. The following three steps can be selectively conducted after the positioning at the measuring position. Measurement is conducted relative to the substrate at a first step. The positionings at the alignment and measuring positions are again automatically conducted relative to the substrate at a second step in response to the first and second data stored. The positionings at the alignment and measuring positions are again conducted relative to the substrate while storing first and second new data resulted from these re-positionings at a third step.
申请公布号 US5113132(A) 申请公布日期 1992.05.12
申请号 US19910687553 申请日期 1991.04.19
申请人 TOKYO ELECTRON LIMITED 发明人 HOSHI, SEIICHI
分类号 H01L21/66;G01R1/073 主分类号 H01L21/66
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