| 摘要 |
<p>PURPOSE:To obtain a highly precise X-ray mask with an excellently yield rate by making a reinforcing frame, and then making the X-ray absorbing pattern. CONSTITUTION:An Si substrate, both whose sides are polished, is installed on a susceptor, and vapor phase etching is applied to the Si substrate by HC1 gas so as to remove the natural oxide film and the pollutant of heavy metals existing on the Si substrate. Next, an SiC film 12 is stacked on the Si substrate 11, and further an SiO2 film 13 is stacked on the rear of the Si substrate 11, and then an aperture is opened at the center of the SiO2 film 13, and a W film 14 is stacked on the SiC film 12. Next, a reinforcing frame 15, which consists of the silicon coated with an SiO2 film, and the silicon substrate 1 are polished into mirror faces, and those are bonded in vacuum, and fixed. Next, electron resist 16 is formed on the W film 14, and with the resist as a mask, the W film 14 is patterned by anisotropic etching.</p> |
