| 摘要 |
A planar pn-junction with high electric strength, which separates a semiconductor region inserted in a semiconductor body from the rest of the semiconductor body, has, in its border region, a plurality of field plates which are separated from a semiconductor zone residing below and extending the semiconductor region by an electrically insulating layer. The field plates contact the semiconductor zone in the area of contact holes. The contact holes respectively have set distances between them and the inner and outer field plate edges, whereby below those field plate parts residing between the contact holes and the inner field plates borders, local doping maxima of the semiconductor zone are provided.
|
